EN29GL064_11 Datasheet, PDF (44/64 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

EN29GL064
Table 15. DC Characteristics
(T_a = - 40°C to 85°C; V_CC = 2.7-3.6V)
Symbol
I_LI
I_LO
I_CC1
I_IO2
I_CC2
I_CC3
I_CC4
I_CC5
I_CC6
I_ACC
V_IL
V_IH
V_HH
V_OL
V_OH
V_LKO
Parameter
Input Leakage Current
Output Leakage Current
V_CC Active Read Current
V_IO Non-Active Output
V_CC Intra-Page Read
Current
V_CC Active Erase/
Program Current
V_CC Standby Current
V_CC Reset Current
Automatic Sleep Mode
ACC Accelerated Program
Current
Input Low Voltage
Input High Voltage
Acceleration Program
Voltage
Output Low Voltage
Output High Voltage
CMOS
Supply voltage (Erase and
Program lock-out)
Test Conditions
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE# = V_IL; OE# = V_{IH ;}
V_CC = V_CC max
5MHz
10MHz
CE# = V_IL , OE# = V_IH
CE# = V_IL , OE# = V_IH , V_CC =
V_CCmax, f = 10 MHz
CE# = V_IL , OE# = V_IH , V_CC =
V_CCmax, f = 33 MHz
CE# = V_IL , OE# = V_IH , V_CC = V_CCmax
CE#, RESET# = VCC ± 0.3 V,
OE# = V_IH , V_CC = V_CC max
V_IL = Vss + 0.3 V/-0.1V,
RESET# = Vss ± 0.3V
V_IH = Vcc ± 0.3V
V_IL = Vss ± 0.3V
CE# = VIL, OE# = VIH,
VCC = VCCmax,
WP#/ACC = VHH
WP#/ACC
pin
VCC pin
I_OL = 100μA
I_OH = -100μA
Min Typ Max
±5
±1
15 30
25 45
0.2 10
1
10
5
15
20 40
2.0 20
2.0 20
2.0 20
3
10
15 30
-0.5
0.7 x
V_IO
8.5
0.3 x
V_IO
VCC
+ 0.3
9.5
0.85 x
V_IO
0.15 x
V_IO
2.3
2.5
Unit
µA
µA
mA
mA
mA
mA
mA
µA
µA
µA
mA
V
V
V
V
V
V
Notes:
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not
at full CMOS supply voltages.
2. Maximum ICC specifications are tested with Vcc = Vcc max.
3. Not 100% tested.
This Data Sheet may be revised by subsequent versions
44
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. M, Issue Date: 2011/04/13
www.eonssi.com