EN29GL064_11 Datasheet, PDF (56/64 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

EN29GL064
Figure 20. Alternate CE# Controlled Write Operation Timings
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
Addresses
WE#
t_GHEL
OE#
t_WS
CE#
t_WC
t_AS
t_AH
t_WH
t_CP
t_CPH
t_DS
t_DH
VA
t_WHWH1 / t_WHWH2
t_BUSY
Data
RY/BY
t_RH
0xA0 for
Program
0x55 for Erase
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
Status
D_OUT
Reset#
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
D_out = array data read at VA
Shown above are the last two cycles of the program or erase command sequence and the last status read cycle
Reset# shown to illustrate t_RH measurement references. It cannot occur as shown during a valid command
sequence.
Figure 21. DQ2 vs. DQ6
Enter
Embedded
Erase
WE#
Erase
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Resume
Enter
Suspend
Read
Enter
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
This Data Sheet may be revised by subsequent versions
56
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. M, Issue Date: 2011/04/13
www.eonssi.com