EN29GL064_11 Datasheet, PDF (46/64 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

AC CHARACTERISTICS
Table 17. Read-only Operations Characteristics
Parameter
Symbols
Description
Test Setup
JEDEC Standard
t_AVAV
t_AVQV
t_ELQV
t_RC
t_ACC
t_CE
Read Cycle Time
Address to Output Delay
Chip Enable To Output Delay
CE# = V_IL
OE#= V_IL
OE#= V_IL
Min
Max
Max
t_PACC
Page Access Time
Max
t_GLQV t_OE
Output Enable to Output Delay
Max
t_EHQZ t_DF
Chip Enable to Output High Z
Max
t_GHQZ t_DF
Output Enable to Output High Z
Max
Output Hold Time from
t_AXQX t_OH
Addresses, CE# or OE#,
Min
whichever occurs first
t_OEH
Output Enable
Hold Time
Read
Toggle and
DATA# Polling
Min
Min
Notes: High Z is Not 100% tested.
EN29GL064
Speed
Unit
-70
70
ns
70
ns
70
ns
25
ns
25
ns
20
ns
20
ns
0
ns
0
ns
10
ns
Figure 12. AC Waveforms for READ Operations
Addresses
CE#
OE#
WE#
Outputs
RESET#
t_RC
Addresses Stable
t_ACC
tB_OEB
t_DF
t_OEH
t_CE
HIGH Z
t_OH
Output Valid
HIGH Z
RY/BY# 0V
This Data Sheet may be revised by subsequent versions
46
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. M, Issue Date: 2011/04/13
www.eonssi.com