EN29GL064_11 Datasheet, PDF (57/64 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

TABLE 22. ERASE AND PROGRAMMING PERFORMANCE
EN29GL064
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming
Time
Byte
Word
Total Write Buffer time
ACC Total Write Buffer time
Erase/Program Endurance
Typ
0.1
16
8
8
67.2
33.6
100
60
100K
Limits
Max
2
60
200
200
201.6
100.8
Comments
Unit
sec
Excludes 00h programming prior
to erasure
sec
µs
µs
sec
Excludes system level overhead
µs
cycles
Minimum 100K cycles
Notes:
1. Typical program and erase times assume the following conditions: room temperature, 3V and checkboard
pattern programmed.
2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles.
Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
C_IN
Input Capacitance
V_IN = 0
6
7.5
C_OUT
Output Capacitance
V_OUT = 0
8.5
12
C_IN2
Control Pin Capacitance
V_IN = 0
Note: Test conditions are Temperature = 25°C and f = 1.0 MHz.
7.5
9
Unit
pF
pF
pF
Table 24. DATA RETENTION
Parameter Description
Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
This Data Sheet may be revised by subsequent versions
57
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. M, Issue Date: 2011/04/13
www.eonssi.com