EN25S64 Datasheet, PDF (44/62 Pages) Eon Silicon Solution Inc. – 64 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

EN25S64
Chip Erase (CE) (C7h/60h)
The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Chip Erase (CE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 27. Chip Select (CS#) must be driven High after the eighth
bit of the instruction code has been latched in, otherwise the Chip Erase instruction is not executed. As
soon as Chip Select (CS#) is driven High, the self-timed Chip Erase cycle (whose duration is tCE) is
initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
The Chip Erase (CE) instruction is executed only if all Block Protect (BP3, BP2, BP1, BP0) bits are 0.
The Chip Erase (CE) instruction is ignored if one, or more blocks are protected.
The instruction sequence is shown in Figure 27.1 while using the Enable Quad Peripheral Interface mode
(EQPI) (38h) command.
Figure 27. Chip Erase Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions
44
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. G, Issue Date: 2011/09/23
www.eonssi.com