EN29GL256HL Datasheet, PDF (41/57 Pages) Eon Silicon Solution Inc. – 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

AC CHARACTERISTICS
EN29GL256H/L
Table 17. Read-only Operations Characteristics
Parameter
Symbols
Description
Test Setup
JEDEC Standard
Speed
Unit
-90
t_AVAV
t_RC
Read Cycle Time
Min
90
ns
t_AVQV t_ACC
Address to Output Delay
CE# = V_IL
OE#= V_IL
Max
90
ns
t_ELQV
t_CE
Chip Enable To Output Delay
OE#= V_IL Max
90
ns
t_PACC
Page Access Time
Max
25
ns
t_GLQV t_OE
Output Enable to Output Delay
Max
35
ns
t_EHQZ t_DF
Chip Enable to Output High Z
Max
20
ns
t_GHQZ t_DF
Output Enable to Output High Z
Max
20
ns
t_AXQX t_OH
Output Hold Time from
Addresses, CE# or OE#,
whichever occurs first
Min
0
ns
t_OEH
Output Enable
Hold Time
Read
Toggle and
DATA# Polling
Min
0
ns
Min
10
ns
Notes:
1. High Z is Not 100% tested.
2. For - 90
Vcc = 2.7V – 3.6V
Output Load : 1 TTL gate and 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to 3.0 V
Timing Measurement Reference Level, Input and Output: 1.5 V
Figure 10. AC Waveforms for READ Operations
Addresses
tB_RCB
Addresses Stable
CE#
t_AB _CC
tB_OEB
t_DB _F
OE#
tB_OEHB
WE#
t_CB _EB
t_OB _H
Outputs
HIGH Z
Output Valid
HIGH Z
RESET#
RY/BY# 0V
This Data Sheet may be revised by subsequent versions
41
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.,
Rev. j, Issue Date: 2013/08/06
www.eonssi.com