EN29GL256HL Datasheet, PDF (19/57 Pages) Eon Silicon Solution Inc. – 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

Sector Erase
EN29GL256H/L
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing
two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed
by the address of the sector to be erased, and the sector erase command. The Command Definitions
table shows the address and data requirements for the sector erase command sequence.
Once the sector erase operation has begun, only the Sector Erase Suspend command is valid. All
other commands are ignored. If there are several sectors to be erased, Sector Erase Command
sequences must be issued for each sector. That is, only a sector address can be specified for each
Sector Erase command. Users must issue another Sector Erase command for the next sector to be
erased after the previous one is completed.
When the Embedded Erase algorithm is completed, the device returns to reading array data and
addresses are no longer latched. The system can determine the status of the erase operation by using
DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4
illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the
“AC Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram for
timing waveforms.
Figure 6. Sector Erase Operation
START
Write Erase
Command Sequence
Data Poll from
System or Toggle Bit
successfully
completed
Data =FFh?
No
Yes
Erase Done
This Data Sheet may be revised by subsequent versions
19
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.,
Rev. j, Issue Date: 2013/08/06
www.eonssi.com