EN29GL256HL Datasheet, PDF (18/57 Pages) Eon Silicon Solution Inc. – 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

EN29GL256H/L
operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash
devices are capable of handling multiple write buffer programming operations on the same write buffer
address range without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
Figure 5. Write Buffer Programming Operation
This Data Sheet may be revised by subsequent versions
18
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.,
Rev. j, Issue Date: 2013/08/06
www.eonssi.com