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EN29GL256HL Datasheet, PDF (13/57 Pages) Eon Silicon Solution Inc. – 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
Table 4. Device OPERATING MODES
EN29GL256H/L
256M FLASH USER MODE TABLE
Operation
CE# OE# WE# RESET# WP#/ACC
A0-
A23
Read
Write
L
L
H
H
L
H
L
H
Accelerated
Program
L
H
L
H
L/H
(Note 1)
VBHH
A IN B
B
A IN B
B
A IN B
B
CMOS Standby
V cc B
B
X
±0.3V
X
Vcc±0.3V H
X
Output Disable L
H
H
H
L/H
X
Hardware Reset X
X
X
L
L/H
X
DQ0-
DQ7
D OUT B
B
D IN B
B
D IN B
B
High-Z
High-Z
High-Z
DQ8-DQ15
BYTE#
= VIH B
B
D OUT B
B
D IN B
B
D IN B
B
BYTE#
= VILB
B
DQ8-
DQ14=
High-Z,
DQ15 =
A-1
High-Z High-Z
High-Z High-Z
High-Z High-Z
Notes:
1. Addresses are A23:A0 in word mode; A23:A-1 in byte mode.
2. If WP# = VIL, on the outermost sector remains protected. If WP# = VIH, the outermost sector is unprotected. WP# has an
internal pull-up; when unconnected, WP# is at VIH. All sectors are unprotected when shipped from the factory (The Secured
Silicon Sector can be factory protected depending on version ordered.)
3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm.
Legend
L = Logic Low = VIL, H = Logic High = VIH, VHH = 8.5–9.5V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
This Data Sheet may be revised by subsequent versions
13
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.,
Rev. j, Issue Date: 2013/08/06
www.eonssi.com