EN29GL256HL Datasheet, PDF (1/57 Pages) Eon Silicon Solution Inc. – 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

EN29GL256H/L
EN29GL256
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory
Page mode Flash Memory, CMOS 3.0 Volt-only
FEATURES
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
• High performance
- Access times as fast as 90 ns
• V_IO Input/Output 1.65 to 3.6 volts
- All input levels (address, control, and DQ input
levels) and outputs are determined by voltage
on V_IO input. V_IO range is 1.65 to V_CC
• 8-word/16-byte page read buffer
• 32-word/64-byte write buffer reduces overall
programming time for multiple-word updates
• Secured Silicon Sector region
- 128-word/256-byte sector for permanent,
secure identification through an 8-word/16-
byte random Electronic Serial Number
- Can be programmed and locked at the factory
or by the customer
• Uniform 64Kword/128KByte Sector
Architecture Two hundred fifty-six sectors
• Suspend and Resume commands for
Program and Erase operations
• Write operation status bits indicate program
and erase operation completion
• Support for CFI (Common Flash Interface)
• Persistent methods of Advanced Sector
Protection
• WP#/ACC input
- Accelerates programming time (when V_HH is
applied) for greater throughput during system
production
- Protects first or last sector regardless of
sector protection settings
• Hardware reset input (RESET#) resets
device
• Ready/Busy# output (RY/BY#) detects
program or erase cycle completion
• Minimum 100K program/erase endurance
cycles.
• Package Options
- 56-pin TSOP
- 64-ball 11mm x 13mm BGA
• Industrial Temperature Range.
GENERAL DESCRIPTION
The EN29GL256 offers a fast page access time of 25 ns with a corresponding random access time as
fast as 90 ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed
in one operation, resulting in faster effective programming time than standard programming algorithms.
This makes the device ideal for today’s embedded applications that require higher density, better
performance and lower power consumption.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.,
Rev. j, Issue Date: 2013/08/06
www.eonssi.com