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HB56UW873E-F Datasheet, PDF (9/27 Pages) Elpida Memory – 64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)
HB56UW873E-F
Read Cycle
Parameter
Access time from RAS
Access time from CAS
Access time from address
Access time from OE
Read command setup time
Read command hold time to CAS
Read command hold time from RAS
Read command hold time to RAS
Column address to RAS lead time
Column address to CAS lead time
CAS to output in low-Z
Output data hold time
Output data hold time from OE
Output buffer turn-off time
Output buffer turn-off to OE
CAS to Din delay time
Output data hold time from RAS
Output buffer turn-off to RAS
Output buffer turn-off to WE
WE to Din delay time
RAS to Din delay time
50 ns
Symbol Min
t RAC
—
t CAC
—
t AA
—
t OEA
—
t RCS
0
t RCH
0
t RCHR
50
t RRH
0
t RAL
30
t CAL
15
t CLZ
2
t OH
3
t OHO
3
t OFF
—
t OEZ
—
t CDD
18
t OHR
3
t OFR
—
t WEZ
—
t WED
18
t RDD
13
Max
50
18
30
18
—
—
—
—
—
—
—
—
—
18
18
—
—
13
18
—
—
60 ns
Min Max
—
60
—
20
—
35
—
20
0
—
0
—
60
—
0
—
35
—
18
—
2
—
3
—
3
—
—
20
—
20
20
—
3
—
—
15
—
20
20
—
15
—
Unit Notes
ns 8, 9
ns 9, 10, 17
ns 9, 11, 17
ns 9
ns
ns 12
ns
ns 12
ns
ns
ns
ns 21
ns
ns 13, 21
ns 13
ns 5
ns 21
ns 13, 21
ns 13
ns
ns
Write Cycle
Parameter
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
50 ns
Symbol Min
t WCS
0
t WCH
8
t WP
8
t RWL
18
t CWL
8
t DS
0
t DH
13
Max
—
—
—
—
—
—
—
60 ns
Min Max
0
—
10
—
10
—
20
—
10
—
0
—
15
—
Unit Notes
ns 14
ns
ns
ns
ns
ns 15
ns 15
Data Sheet E0102H10
9