HB56UW873E-F Datasheet, PDF (10/27 Pages) Elpida Memory – 64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)

HB56UW873E-F
Read-Modify-Write Cycle
Parameter
Read-modify-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE hold time from WE
50 ns
Symbol Min
t _RWC
t _RWD
t _CWD
t _AWD
t _OEH
116
72
30
42
13
Max
—
—
—
—
—
60 ns
Min Max
140 —
84
—
34
—
49
—
15
—
Unit Notes
ns
ns 14
ns 14
ns 14
ns
Refresh Cycle
Parameter
CAS setup time (CBR refresh cycle)
CAS hold time (CBR refresh cycle)
WE setup time (CBR refresh cycle)
WE hold time (CBR refresh cycle)
RAS precharge to CAS hold time
50 ns
Symbol Min
t _CSR
10
t _CHR
8
t _WRP
5
t _WRH
8
t _RPC
5
Max
—
—
—
—
—
60 ns
Min Max
10
—
10
—
5
—
10
—
5
—
Unit Notes
ns
ns
ns
ns
ns
EDO Page Mode Cycle
50 ns
Parameter
Symbol Min
EDO page mode cycle time
t _HPC
20
EDO page mode RAS pulse width
t _RASP
—
Access time from CAS precharge
t _CPA
—
RAS hold time from CAS precharge t_CPRH
33
Output data hold time from CAS low t_DOH
3
CAS hold time referred OE
t _COL
8
CAS to OE setup time
t _COP
5
Read command hold time from CAS t_RCHC
28
precharge
Write pulse width during CAS precharge t_WPE
8
OE precharge time
t _OEP
8
60 ns
Max Min
—
25
100000 —
33
—
—
40
—
3
—
10
—
5
—
35
—
10
—
10
Max Unit
—
ns
100000 ns
40
ns
—
ns
—
ns
—
ns
—
ns
—
ns
Notes
20
16
9, 17
9, 22
—
ns
—
ns
Data Sheet E0102H10
10