HB56UW873E-F Datasheet, PDF(7/27 Page) Elpida Memory – 64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)

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HB56UW873E-F Datasheet, PDF (7/27 Pages) Elpida Memory – 64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)

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HB56UW873E-F

DC Characteristics

HB56UW873E

50 ns

60 ns

Parameter

Symbol Min Max Min Max Unit Test conditions

Notes

Operating current

I CC1

1225 â

1045 mA tRC = min

1, 2

Standby current

I CC2

mA TTL interface

RAS, CAS = VIH

Dout = High-Z

14.5 â

14.5 mA CMOS interface

RAS, CAS â¥ VCC â 0.2 V

Dout = High-Z

RAS-only refresh

I CC3

1225 â

1045 mA tRC = min

current

Standby current

I CC5

RAS = VIH, CAS = VIL

Dout = enable

CAS-before-RAS

refresh current

I CC6

1225 â

1045 mA tRC = min

EDO page mode

I CC7

current

Input leakage current ILI

Output leakage current ILO

1000 â

910 mA RAS = VIL , CAS cycle, 1, 3

tHPC = tHPC min

â5

ÂµA

0 V â¤ Vin â¤ VCC + 0.3 V

â5

ÂµA

0 V â¤ Vout â¤ VCC

Dout = disable

Output high voltage VOH

2.4

VCC

2.4

VCC

High Iout = â2 mA

Output low voltage

VOL

0.4 0

0.4 V

Low Iout = 2 mA

Notes: 1. ICC depends on output load condition when the device is selected, ICC max is specified at the output

open condition.

2. Address can be changed once or less while RAS = VIL.

3. Measured with one sequential address change per EDO cycle, tHPC.

Capacitance (Ta = 25Â°C, VCC = 3.3 V Â± 0.3 V)

Parameter

Symbol

Typ

Max

Unit

Notes

Input capacitance (Address)

CI1

Input capacitance (CAS, WE, OE)

CI2

Input capacitance (RAS)

CI3

I/O capacitance (DQ)

CI/O

1, 2

Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.

2. CAS = VIH to disable Dout.

Data Sheet E0102H10

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