HB56UW873E-F Datasheet, PDF (8/27 Pages) Elpida Memory – 64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)

HB56UW873E-F
AC Characteristics (Ta = 0 to 70°C, V_CC = 3.3 V ±0.3 V, V_SS = 0 V)^{*1, *2, *19}
Test Conditions
• Input rise and fall times: 2 ns
• Input levels: V_IL = 0 V, V_IH = 3.0 V
• Input timing reference levels: 0.8 V, 2.0 V
• Output timing reference levels: 0.8 V, 2.0 V
• Output load: 1 TTL gate + C_L (100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
Parameter
Random read or write cycle time
RAS precharge time
CAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
OE to Din delay time
OE delay time from Din
CAS delay time from Din
Transition time (rise and fall)
50 ns
Symbol Min
t _RC
84
t _RP
30
t _CP
8
t _RAS
50
t _CAS
8
t _ASR
5
t _RAH
8
t _ASC
0
t _CAH
8
t _RCD
12
t _RAD
10
t _RSH
18
t _CSH
38
t _CRP
10
t _OED
18
t _DZO
0
t _DZC
0
t_T
2
Max
—
—
—
10000
10000
—
—
—
—
32
20
—
—
—
—
—
—
50
60 ns
Min
104
40
10
60
10
5
10
0
10
14
12
20
40
10
20
0
0
2
Max
—
—
—
10000
10000
—
—
—
—
40
25
—
—
—
—
—
—
50
Unit Notes
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns 3
ns 4
ns
ns
ns
ns 5
ns 6
ns 6
ns 7
Data Sheet E0102H10
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