HB52F328EM-75B Datasheet, PDF (13/19 Pages) Elpida Memory – 256MB Unbuffered SDRAM DIMM

HB52F328EM-75B, HB52F329EM-75B
Pin Capacitance (TA = 25°C, VCC = 3.3V ± 0.3V) (HB52F328EM)
Parameter
Input capacitance
Input/Output capacitance
Symbol
CI1
CI2
CI3
CI4
CI5
CI6
CI/O1
Pin
Address
/RE, /CE, /W
CKE
/S
CK
DQMB
DQ
max.
70
63
68
34
50
16
14
Unit
Notes
pF
1, 2, 4
pF
1, 2, 4
pF
1, 2, 4
pF
1, 2, 4
pF
1, 2, 4
pF
1, 2, 4
pF
1, 2, 3, 4
Pin Capacitance (TA = 25°C, VCC = 3.3V ± 0.3V) (HB52F329EM)
Parameter
Symbol
Pin
max.
Unit
Notes
Input capacitance
CI1
Address
72
pF
1, 2, 4
CI2
/RE, /CE, /W
66
pF
1, 2, 4
CI3
CKE
70
pF
1, 2, 4
CI4
/S
39
pF
1, 2, 4
CI5
CK
50
pF
1, 2, 4
CI6
DQMB
21
pF
1, 2, 4
Input/Output capacitance
CI/O1
DQ
14
pF
1, 2, 3, 4
Notes: 1.Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1MHz, 1.4Vbias, 200mV swing.
3. DQMB = VIH to disable Data-out.
4. This parameter is sampled and not 100% tested.
Data Sheet E0184H10 (Ver. 1.0)
13