HB52F328EM-75B Datasheet, PDF (12/19 Pages) Elpida Memory – 256MB Unbuffered SDRAM DIMM

HB52F328EM-75B, HB52F329EM-75B
DC Characteristics (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
Parameter
HB52F328EM HB52F329EM
/CE latency
Symbol Grade max.
max.
Unit Test condition
Notes
Operating current
(CL = 2)
(CL = 3)
Standby current in power
down
Standby current in power
down (input signal stable)
Standby current in non
power down
Active standby current in
power down
Active standby current in
non power down
Burst operating current
(CL = 2)
(CL = 3)
ICC1
ICC1
ICC2P
PC100 880
PC133 880
24
ICC2PS
16
ICC2N
160
ICC3P
32
ICC3N
240
ICC4
ICC4
PC100 800
PC133 1080
990
990
27
18
180
36
270
900
1215
mA
Burst length = 1
tRC = min.
mA
1, 2, 3
mA CKE = VIL, tCK = 12ns 6
mA CKE = VIL, tCK = ∞ 7
mA
CKE, /S = VIH,
tCK = 12ns
4
mA CKE = VIL, tCK = 12ns 1, 2, 6
mA
CKE, /S = VIH,
tCK = 12ns
1, 2, 4
mA tCK = min., BL = 4
1, 2, 5
mA
Refresh current
ICC5
1760
1980
mA tRC = min.
3
Self refresh current
ICC6
24
27
mA
VIH ≥ VCC – 0.2 V
VIL ≤ 0.2 V
8
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK operating current.
7. After power down mode, no CK operating current.
8. After self refresh mode set, self refresh current.
DC Characteristics2 (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V)
Parameter
Input leakage current
Symbol
min.
ILI
–10
max.
Unit
10
µA
Output leakage current
ILO
–10
10
µA
Output high voltage
VOH
2.4
—
V
Output low voltage
VOL
—
0.4
V
Test condition
0 ≤ VIN ≤ VCC
0 ≤ VOUT ≤ VCC
DQ = disable
IOH = –4mA
IOL = 4mA
Notes
Data Sheet E0184H10 (Ver. 1.0)
12