HB54A5128FN-A75B Datasheet, PDF (12/17 Pages) Elpida Memory – 512MB Unbuffered DDR SDRAM DIMM

HB54A5128FN, HB54A5129FN-A75B/B75B/10B
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–1.0 to +4.6
V
1
Supply voltage relative to VSS
VCC, VCCQ
–1.0 to +4.6
V
1
Short circuit output current
Power dissipation
HB54A5128FN
HB54A5129FN
Operating temperature
EStorage temperature
Notes: 1. Respect to VSS.
IOUT
PT
PT
Topr
Tstg
DC Operating Conditions (TA = 0 to +55°C)
O^Parameter
Supply voltage
L ^{Input reference voltage}
Symbol
VCC, VCCQ
VSS
VREF
50
8
9
0 to +55
–50 to +100
min.
Typ
2.3
2.5
0
0
1.15
1.25
mA
W
W
°C
°C
max.
2.7
0
1.35
Unit Notes
V
1, 2
V
V
1
Termination voltage
VTT
VREF – 0.04 VREF
VREF + 0.04 V
1
DC Input high voltage
VIH
VREF + 0.18 —
VCCQ + 0.3 V
1, 3
DC Input low voltage
VIL
–0.3
—
VREF – 0.18 V
1, 4
DC Input signal voltage
VIN (dc)
–0.3
—
VCCQ + 0.3 V
5
DC differential input voltage
VSWING (dc) 0.36
—
VCCQ + 0.6 V
6
P Notes: 1. All parameters are referred to VSS, when measured.
2. VCCQ must be lower than or equal to VCC.
3. VIH is allowed to exceed VCC up to 4.6V for the period shorter than or equal to 5ns.
4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
r _{5. VIN (dc) specifies the allowable dc execution of each differential input.}
oduct ^{6. VSWING (dc) specifies the input differential voltage required for switching.}
Data Sheet E0087H40 (Ver. 4.0)
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