HB54A1288KM Datasheet, PDF (12/16 Pages) Elpida Memory – 128MB DDR SDRAM S.O. DIMM

HB54A1288KM
DC Characteristics (TA = 0 to 65°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol Grade
max.
Unit Test condition
Notes
-A75B
400
Operating current (ACTV-PRE) ICC0
-B75B
380
-10B
320
mA CKE ≥ VIH, tRC = min. 1, 2, 5
Operating current (ACTV-READ-
PRE)
ICC1
-A75B
-B75B
-10B
620
580
520
mA
CKE ≥ VIH, BL = 2,
CL = 2.5, tRC = min.
-A75B
72
Idle power down standby current ICC2P -B75B
60
-10B
48
mA CKE ≤ VIL
E^{Idle standby current}
-A75B
160
ICC2N -B75B
140
-10B
120
mA CKE ≥ VIH, /CS ≥ VIH
Active power down standby
current
ICC3P
-A75B
-B75B
-10B
100
80
60
mA CKE ≤ VIL
O^{Active standby current}
-A75B
200
ICC3N -B75B
180
-10B
160
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = max.
Operating current
(Burst read operation)
ICC4R
-A75B
-B75B
-10B
1020
980
940
mA
CKE ≥ VIH, BL = 2,
CL = 2.5
Operating current
L _{(Burst write operation)}
-A75B
960
ICC4W -B75B
920
-10B
880
mA
CKE ≥ VIH, BL = 2,
CL = 2.5
Auto refresh current
-A75B
820
ICC5
-B75B
800
-10B
720
mA
tRFC = min.,
Input ≤ VIL or ≥ VIH
P ^{Self refresh current}
-A75B
12
ICC6
-B75B
12
-10B
12
mA
Input ≥ VCC – 0.2V
Input ≤ 0.2V.
Notes. 1. These ICC data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
r _{4. All banks idle.}
5. Command/Address transition once per one cycle.
o 6. Data/Data mask transition twice per one cycle.
7. The ICC data on this table are measured with regard to tCK = min. in general.
1, 2, 5
4
4
3
3
1, 2, 5, 6
1, 2, 5, 6
d ^{DC Characteristics2 (TA = 0 to 65°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)}
Parameter
Input leakage current
u ^{Output leakage current}
Output high voltage
ct ^{Output low voltage}
Symbol
ILI
ILO
VOH
VOL
min.
max.
Unit
–10
10
µA
–10
10
µA
VTT + 0.76 —
V
—
VTT – 0.76 V
Test condition
VCC ≥ VIN ≥ VSS
VCC ≥ VOUT ≥ VSS
IOH (max.) = –15.2mA
IOL (min.) = 15.2mA
Notes
Preliminary Data Sheet E0190H10 (Ver. 1.0)
12