HB54A1288KM Datasheet, PDF (11/16 Pages) Elpida Memory – 128MB DDR SDRAM S.O. DIMM

HB54A1288KM
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–1.0 to +4.6
V
1
Supply voltage relative to VSS
VCC, VCCQ
–1.0 to +4.6
V
1
Short circuit output current
IOUT
50
mA
Power dissipation
PT
4
W
Operating temperature
Topr
0 to +65
°C
Storage temperature
Tstg
–50 to +100
°C
Notes: 1. Respect to VSS.
E_Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
O_{DC Operating Conditions (TA = 0 to +65°C)}
L ^Parameter
Symbol
min.
Typ
max.
Unit Notes
Supply voltage
VCC
2.3
2.5
2.7
V
1, 2
VSS
0
0
0
V
Input reference voltage
VREF
1.15
1.25
1.35
V
1
Termination voltage
VTT
VREF – 0.04 VREF
VREF + 0.04 V
1
DC Input high voltage
VIH
VREF + 0.18 —
VCCQ + 0.3 V
1, 3
P _{DC Input low voltage}
VIL
–0.3
—
VREF – 0.18 V
1, 4
DC Input signal voltage
VIN (dc)
–0.3
—
VCCQ + 0.3 V
5
DC differential input voltage
VSWING (dc) 0.36
—
VCCQ + 0.6 V
6
Notes: 1. All parameters are referred to VSS, when measured.
r _{2. VCCQ must be lower than or equal to VCC.}
3. VIH is allowed to exceed VCC up to 4.6V for the period shorter than or equal to 5ns.
o _{4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.}
5. VIN (dc) specifies the allowable dc execution of each differential input.
duct ^{6. VSWING (dc) specifies the input differential voltage required for switching.}
Preliminary Data Sheet E0190H10 (Ver. 1.0)
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