E520.14 Datasheet, PDF (12/41 Pages) ELMOS Semiconductor AG – Provides four HS-CAN physical interfaces

Quad CAN transceiver
PRODUCTION DATA – FEB 4, 2014
3.3.3 Automatic bus biasing
No.
Description
1 disable time until bus biasing is
switched off automatically
2 Enable time until RXD reflects
CAN bus
Condition
CAN bus is
recessive
CAN_CFG.BIAS =
H
Symbol
tSilence
tCAN,ON,AUTO
Table 12: AC Characteristics
E520.14
Min Typ Max Unit
800
ms
20
58
µs
3.4 Local wake up; pin WK
No.
Description
1 Threshold of local wake up, VWK
rising
2 Threshold of local wake up, VWK
falling
3 Pull up current
4 Pull down current
5 Leakage current
6 Leakage current
Condition
VWK rising
Symbol
VWK,TH,LH
VWK falling
VWK,TH,HL
V > V WK
WK,TH,LH_max
VS - VWK > 1V
V < V WK
WK,TH,HL_min
VWK > 1V
VS = 13.5V
VWK = VVS
VS = 13.5V
VWK = 0V
IWK,PU
IWK_PD
IWK_LEAK_H
IWK_LEAK_L
Table 13: DC Characteristics
No.
Description
1 Local wake up debounce time
Condition
Threshold crossing
transition detected
Symbol
tWK,DEB
Table 14: AC Characteristics
Min Typ Max Unit
0.6
0.8 VS
0.5
0.7 VS
-100
-10 µA
10
100 µA
2
4
µA
-4
-2
µA
Min Typ Max Unit
13
40
µs
3.5 Interrupt; pin INTN
No.
Description
1 output low level
2 pull up current, implementation
based on resistor and high side
reverse diode with minimum
leakage
Condition
IINTN = 2 mA
VVIO > 3 V
VVIO = 5V
VINTN = 0V
Symbol
VINTN,OUTL
IINTN,PU
Table 15: DC Characteristics
Min Typ Max Unit
0.4
V
20
30
45
µA
3.6 SPI communication; pins SCK, SDI, SDO, CSN
No.
Description
Condition
1 CSN input high threshold voltage VVIO ≥ 3V
2 CSN input low threshold voltage VVIO ≥ 3V
Symbol
VCSN,INH
VCSN,INL
Min Typ Max Unit
0.7 VIO
0.3
VIO
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet 12 / 41
QM-No.: 25DS2014E.02