DG758BX45 Datasheet, PDF (9/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
3.0
t_r
2.5
2.0
1.5
t_d
1.0
Conditions:
T_j = 125˚C, I_FGM = 40A
0.5
Cs = 6µF, Rs = 4.4Ω,
dI_T/dt = 300A/µs, V_D = 2250V,
dI_FG/dt = 40A/µs
0
0
500
1000
1500
2000
2500
3000
On-state current - (A)
Fig.13 Delay time & rise time vs turn-on current
5.0
Conditions:
4.5
I_T = 3000A
T_j = 125˚C
Cs = 6µF
4.0
Rs = 4.4Ω
dI_T/dt = 300A/µs
3.5
V_D = 2250V
dI_FG/dt = 40A/µs
3.0
2.5
t_r
2.0
1.5
t_d
1.0
0.5
0
0 10 20 30 40 50 60 70 80
Peak forward gate current I_FGM - (A)
Fig.14 Delay time & rise time vs peak forward gate current
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