DG758BX45 Datasheet, PDF (12/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
6.0
Conditions:
5.0
T_j = 125˚C
V_DM = 2000V
dI_GQ/dt = 40A/µs
4.0
Cs = 1.0µF
3.0
Cs = 2.0µF
Cs = 4.0µF
2.0
1.0
0
0
500
1000
1500
2000
2500
On-state current - (A)
Fig.19 Turn-off energy vs on-state current
25
Conditions:
Cs = 6µF
dI_GQ/dt = 40A/µs
20
15
T_j = 125˚C
T_j = 25˚C
Cs = 6.0µF
3000
10
5
0
0
500
1000
1500
2000
2500
3000
On-state current - (A)
Fig.20 Gate storage time vs on-state current
12/19