DG758BX45 Datasheet, PDF (7/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
2250
Conditions:
2000
T_j = 25˚C
I_FGM = 40A
Cs = 6µF
1750 _{Rs = 4.4 Ohms}
dI/dt = 300A/µs
1500
1250
1000
V_D = 2250V
V_D = 1500V
V_D = 750V
750
500
250
0
0
500
1000
1500
2000
2500
3000
On-state current - (A)
Fig.8 Turn-on energy vs on-state current
2500
2250
2000
V_D = 2250V
1750
1500
1250
V_D = 1500V
1000
V_D = 750V
750 ^Conditions:
I_T = 3000A, T_j = 25˚C
500 ^{Cs = 6µF, Rs = 4.4 Ohms, dIT/dt = 300A/µs}
0 10 20 30 40 50 60 70 80
Peak forward gate current I_FGM- (A)
Fig.9 Turn-on energy vs peak forward gate current
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