DG758BX45 Datasheet, PDF (18/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (one in each electrode).
15˚
63 max
Ø112 max
Ø66
Anode
9.6
Ø70
63 max
Cathode
Nominal weight: 1200g
Clamping force: 35kN ±10%
Lead length: 505mm
Package outine type code: X
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
GTO gate drive units
Recommendations for clamping power semiconductors
Use of V , r on-state characteristic
TO T
Impoved gate drive for GTO series connections
Application Note
Number
AN4506
AN4571
AN4839
AN5001
AN5177
18/19