DG758BX45 Datasheet, PDF (15/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

1000
Conditions:
I_T = 3000A
Cs = 6µF
900
DG758BX45
800
T_j = 125˚C
700 ^Tj ^{= 25˚C}
600
500
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
10.0
Conditions:
Cs = 6µF
dI_GQ/dt = 40A/µs
7.5
T_j = 125˚C
T_j = 25˚C
5.0
2.5
0
0
500
1000
1500
2000
2500
3000
On-state current - (A)
Fig.26 Turn-off gate charge vs on-state current
15/19