DG758BX45 Datasheet, PDF (16/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
15.0
12.5
T_j = 125˚C
10.0
T_j = 25˚C
7.5
Conditions:
I_T = 3000A
Cs = 6µF
5.0
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
T_j = 125˚C
500
V_D = 2250V
V_D = 3000V
0
0.1
1.0
10
100
Gate cathode resistance R_GK - (Ohms)
1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
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