GP400DDS12 Datasheet, PDF (8/10 Pages) Dynex Semiconductor – Powerline N-Channel Dual Switch IGBT Module

GP400DDS12
800
700
600
T_j = 25˚C
T_j = 125˚C
500
400
300
200
100
0
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, V_F - (V)
Fig.13 Diode typical forward characteristics
1000
900
800
700
600
500
400
300
200 _{Tcase = 125˚C}
V_ge = ±15V
100 R_g = 5Ω*
*Recommended minimum value
0
0
200
400
600
800 1000
Collector-emitter voltage, V_ce - (V)
1200
Fig.14 Reverse bias safe operating area
10000
100
I_C max. (single pulse)
1000
t_{p = 1ms}
10
100
1
10
Diode
Transistor
1
1
10
100
1000
Collector-emitter voltage, V_ce - (V)
Fig.15 Forward bias safe operating area
10000
0.1
1
10
100
1000
Pulse width, t_p - (ms)
Fig.16 Transient thermal impedance
10000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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