GP400DDS12 Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Powerline N-Channel Dual Switch IGBT Module

GP400DDS12
90
Conditions:
80
T_case = 25˚C,
V_CE = 600V,
V_GE = ±15V
A
70
B
60
C
50
40
30
20
A : R_g = 15Ω
10
B : R_g = 10Ω
C : R_g = 5Ω
0
0 100 200 300 400 500 600 700 800
Collector current, I_C - (A)
Fig.9 Typical turn-off energy vs collector current
125
Conditions:
T_case = 125˚C,
V_CE = 600V,
100 ^{VGE = ±15V}
A
B
75
C
50
25
A : R_g = 15Ω
B : R_g = 10Ω
C : R_g = 5Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.10 Typical turn-off energy vs collector current
35
Conditions:
V_CE = 600V,
30
V_GE = 15V,
R_g = 5Ω
25
T_case = 125˚C
20
15
T_case = 25˚C
10
5
0
0
100
200
300
400
Collector current, I_C (A)
Fig.11 Typical diode reverse recovery charge vs collector current
2000
1800
1600
1400
t_d(off)
t_f
Conditions:
T_case = 125˚C,
V_CE = 600V
V_GE = 15V
R_g = 5Ω
1200
1000
800
t_d(on)
600
400
200
0
0
t_r
50 100 150 200 250 300 350 400
Collector currrent, I_C - (A)
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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