GP400DDS12 Datasheet, PDF (2/10 Pages) Dynex Semiconductor – Powerline N-Channel Dual Switch IGBT Module

GP400DDS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
V_CES
V_GES
I
C
Collector-emitter voltage
Gate-emitter voltage
Collector current
I
C(PK)
P_max
V
isol
Maximum power dissipation
Isolation voltage
Test Conditions
V_GE = 0V
-
DC, T = 25˚C
case
DC, T_case = 75˚C
1ms, T_case = 75˚C
T_case = 25˚C (Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max.
1200
±20
600
400
800
3750
2500
Units
V
V
A
A
A
W
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Conditions
R_th(j-c)
R_th(j-c)
R_th(c-h)
T_j
Thermal resistance - transistor (per arm) DC junction to case
Thermal resistance - diode (per arm)
Thermal resistance - Case to heatsink
(per module)
Junction temperature
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
T_stg Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
35 ^oC/kW
-
-
70 ^oC/kW
-
8 ^oC/kW
-
150 ^oC
-
125 ^oC
–40 125 ^oC
-
5 Nm
-
2 Nm
-
10 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/10