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| GP400DDS12 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Powerline N-Channel Dual Switch IGBT Module | |||
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GP400DDS12
INDUCTIVE SWITCHING CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Tcase = 25ËC unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
t
Fall time
f
EOFF Turn-off energy loss
t
Turn-on delay time
d(on)
t
Rise time
r
EON Turn-on energy loss
Q
rr
Diode reverse recovery charge
Qrr
Diode reverse recovery charge
T = 125ËC unless stated otherwise.
case
td(off)
Turn-off delay time
tf
Fall time
EOFF Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
E
Turn-on energy loss
ON
Qrr
Diode reverse recovery charge
Qrr
Diode reverse recovery charge
Conditions
IC = 400A
VGE = ±15V
VCE = 600V
R
G(ON)
=
R
G(OFF)
=
3.3â¦
L ~ 100nH
IF = 400A
V = 50%V ,
R
CES
dIF/dt = 2000A/µs
IC = 400A
VGE = ±15V
V = 600V
CE
RG(ON) = RG(OFF) = 3.3â¦
L ~ 100nH
IF = 400A
V = 50%V ,
R
CES
dIF/dt = 2000A/µs
Min. Typ. Max. Units
- 1100 1300 ns
- 150 200 ns
- 130 170 mJ
- 800 900 ns
- 320 400 ns
-
90 130 mJ
-
30 50 µC
-
170
-
µC
- 1300 1500 ns
- 200 250 ns
- 170 250 mJ
- 950 1200 ns
- 350 450 ns
- 150 200 mJ
-
50 70 µC
-
225
-
µC
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/10
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