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| GP400DDS12 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Powerline N-Channel Dual Switch IGBT Module | |||
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ELECTRICAL CHARACTERISTICS
T = 25ËC unless stated otherwise.
case
Symbol
Parameter
ICES
Collector cut-off current
IGES
VGE(TH)
Gate leakage current
Gate threshold voltage
VCE(SAT) Collector-emitter saturation voltage
IF
Diode forward current
IFM Diode maximum forward current
VF
Diode forward voltage
C
Input capacitance
ies
LM
Module inductance
GP400DDS12
Conditions
Min. Typ. Max. Units
VGE = 0V, VCE = VCES
-
V = 0V, V = V , T = 125ËC -
GE
CE
CES case
VGE = ±20V, VCE = 0V
-
IC = 120mA, VGE = VCE
4
VGE = 15V, IC = 400A
-
VGE = 15V, IC = 400A, Tcase = 125ËC -
DC
-
-
1 mA
-
50 mA
-
±4 µA
-
7.5 V
2.7 3.5 V
3.2 4.0 V
- 400 A
tp = 1ms
-
- 800 A
IF = 400A
- 2.5 3.0 V
IF = 400A, Tcase = 125ËC
- 2.4 2.9 V
V = 25V, V = 0V, f = 1MHz -
CE
GE
45
-
nF
-
-
20
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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