GP400DDS12 Datasheet, PDF (6/10 Pages) Dynex Semiconductor – Powerline N-Channel Dual Switch IGBT Module

GP400DDS12
CURVES
800
Common emitter
700 ^{Tcase = 25˚C}
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig.5 Typical output characteristics
800
Common emitter
700 ^{Tcase = 125˚C}
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig.6 Typical output characteristics
80
Conditions:
T_case = 25˚C,
70 V_CE = 600V,
A
V_GE = ±15V
60
B
50
40
C
30
20
10
A : R_g = 15Ω
B : R_g = 10Ω
C : R_g = 5Ω
0
0 50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.7 Typical turn-on energy vs collector current
110
Conditions:
100 ^Tcase ^{= 125˚C,}
V_CE = 600V,
A
90 ^VGE ^{= ±15V}
80
B
70
C
60
50
40
30
20
A : R_g = 15Ω
10
B : R_g = 10Ω
C : R_g = 5Ω
0
0
50 100 150 200 250 300 350 400
Collector current, I_C - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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