GP2400ESM12 Datasheet, PDF (8/12 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Preliminary Information

GP2400ESM12
2400
2000
1600
T_j = 25˚C
T_j = 125˚C
1200
800
400
0
0
0.5
1
1.5
2
2.5
3
Forward voltage, V_F - (V)
Fig.13 Diode typical forward characteristics
10000
3500
3000
2500
2000
1500
1000
500
0
0
Conditions:
T_case = 125'C
V_ge = 15
R_g = 3.3 ohms
200 400 600 800 1000
Collector emitter voltage, V_ce - (V)
1200 1400
Fig.14 Reverse bias safe operating area
100
1000
I_{C max} (DC)
100
10
10
t_p = 50µs
t_p = 100µs
t_p = 1ms
1
Diode
Transistor
1
0.1
1
10
100
1000
10000
0.001
0.01
0.1
1
10
Collector emitter voltage, V_ce - (V)
Pulse width, t_p - (s)
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
8/12