GP2400ESM12 Datasheet, PDF (7/12 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Preliminary Information

GP2400ESM12
1600
1400
Conditions:
T_case = 25˚C
V_ce = 600V
V_ge = 15V
1200
A
1000
B
800
C
600
400
200
0
0
A: R_g = 7Ω
B: R_g = 4.3Ω
C: R_g = 3.3Ω
400 800
1200 1600 2000 2400
Collector current, I_C - (A)
Fig.9 Typical turn-off energy vs collector current
1800
1600
1400
Conditions:
T_case = 125'C
V_ce = 600V
V_ge = 15V
A
1200
B
1000
C
800
600
400
A: R_g = 7Ω
200
B: R_g = 4.3Ω
C: R_g = 3.3Ω
0
0
400 800
1200 1600 2000 2400
Collector current, I_C - (A)
Fig.10 Typical turn-off energy vs collector current
160
Conditions:
V_CE = 600V
140 ^VGE ^{= 15V}
R_g = 3.3Ω
120
100
T_case = 125˚C
80
T_case = 25˚C
60
40
20
0
0
400
800 1200 1600 2000 2400
Collector current, I_C - (A)
Fig.11 Typical diode reverse recovery charge vs collector current
3000
2500
2000
1500
Conditions:
T_case = 125˚C
V_ce = 600V
V_ge = 15V
R_g = 3.3Ω
t_d(on)
t_d(off)
1000
t_r
500
t_f
0
0
400
800
1200 1600 2000
Collector current, I_C - (A)
Fig.12 Typical switching characteristics
2400
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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