GP2400ESM12 Datasheet, PDF (2/12 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Preliminary Information

GP2400ESM12
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
V_CES
V_GES
I
C
I_C(PK)
P_max
V_isol
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. power dissipation
Isolation voltage
Test Conditions
V = 0V
GE
-
DC, T_case = 75˚C, T_j = 125˚C
1ms, T_case = 75˚C, T_j = 125˚C
T = 25˚C (Transistor), T = 150˚C
case
j
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1200 V
±20
V
2400 A
4800 A
20.8 kW
2500 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
R_th(j-c)
R_th(j-c)
R
th(c-h)
Thermal resistance - transistor
DC junction to case
Thermal resistance - diode
DC junction to case
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
T_j
Junction temperature
Transistor
Diode
T_stg
Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
6 ˚C/kW
-
13.3 ˚C/kW
-
6 ˚C/kW
-
150 ˚C
-
125 ˚C
–40 125 ˚C
-
5
Nm
-
2
Nm
-
10 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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