GP2400ESM12 Datasheet, PDF (3/12 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Preliminary Information

ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
I_CES
Collector cut-off current
I_GES
V
GE(TH)
V_CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I_F
Diode forward current
I
Diode maximum forward current
FM
V_F
Diode forward voltage
C
Input capacitance
ies
L_M
Module inductance
GP2400ESM12
Test Conditions
Min. Typ. Max. Units
V_GE = 0V, V_CE = V_CES
-
V = 0V, V = V , T = 125˚C
-
GE
CE
CES case
V_GE = ±20V, V_CE = 0V
-
I_C = 120mA, V_GE = V_CE
4
V_GE = 15V, I_C = 2400A
-
V_GE
=
15V,
I
C
=
2400A,
,
T
case
=
125˚C
-
DC, T_case = 50˚C, T_j = 125˚C
-
t_p = 1ms, T_j = 125˚C
-
I_F = 2400A
-
I_F = 2400A, T_case = 125˚C
-
V = 25V, V = 0V, f = 1MHz
-
CE
GE
-
-
-
3
mA
-
100 mA
-
12 µA
-
7.5
V
2.7
3.5
V
3.2
4.0
V
-
2400 A
-
4800 A
2.2
2.4
V
2.3
2.5
V
270
-
nF
10
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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