GP2400ESM12 Datasheet, PDF (4/12 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Preliminary Information

GP2400ESM12
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
t_d(off)
Turn-off delay time
t
Fall time
f
E_OFF
Turn-off energy loss
t_d(on)
Turn-on delay time
t_r
Rise time
E_ON
Turn-on energy loss
Q
Diode reverse recovery charge
rr
I_C = 2400A
V_GE = ±15V
V_CE = 600V
R_G(ON) = R_G(OFF) = 3.3Ω
L ~ 80nH
I_F = 2400A, V_R = 50% V_CES,
dI_F/dt = 2000A/µs
T = 125˚C unless stated otherwise.
case
Symbol
Parameter
t_d(off)
Turn-off delay time
t_f
Fall time
E_OFF
Turn-off energy loss
t
Turn-on delay time
d(on)
t_r
Rise time
E_ON
Turn-on energy loss
Q_rr
Diode reverse recovery charge
Test Conditions
I_C = 2400A
V_GE = ±15V
V_CE = 600V
R_G(ON) = R_G(OFF) = 3.3Ω
L ~ 80nH
I_F = 2400A, V_R = 50% V_CES,
dI_F/dt = 2000A/µs
Min. Typ. Max. Units
-
2300
-
ns
-
400
-
ns
-
820
-
mJ
-
2600
-
ns
-
1100
-
ns
-
490
-
mJ
-
200
-
µC
Min. Typ. Max. Units
-
2570
-
ns
-
400
-
ns
-
980
-
mJ
-
2650
-
ns
-
1000
-
ns
-
620
-
mJ
-
400
-
µC
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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