GP2400ESM12 Datasheet, PDF (6/12 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Preliminary Information

GP2400ESM12
TYPICAL CHARACTERISTICS
4800
4200
Common emitter
T_case = 25˚C
V_ge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig.5 Typical output characteristics
4800
4200
Common emitter
T_case = 125˚C
V_ge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig.6 Typical output characteristics
1000
900
800
Conditions:
T_case = 25˚C
V_ce = 600V
V_ge = 15V
700
R_g = 7Ω
600
R_g = 4.3Ω
500
400
R_g = 3.3Ω
300
200
100
0
0
400
800 1200 1600 2000 2400
Collector current, I_C - (A)
Fig.7 Typical turn-on energy vs collector current
1200
1000
Conditions:
T_case = 125˚C
V_ce = 600V
V_ge = 15V
800
A
B
600
C
400
200
0
0
A: R_g = 7Ω
B: R_g = 4.3Ω
C: R_g = 3.3Ω
400
800 1200 1600 2000 2400
Collector current, I_C - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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