GP500LSS06S Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP500LSS06S
1800
500
td(off)
1600
450
1400
400
350
1200 _{Tj = 125˚C}
VGE = ±15V
300
1000 _{VCE = 300V}
Rg = 5Ω
250
800
200
600 _td(on)
150
400
tf
100
200
tr
50
0
0
100
200
300
400
500
0
0
Collector current, I_C - (A)
T_j = 125˚C
T_j = 25˚C
0.25
0.50
0.75
1.00
1.25
Foward voltage, V_F - (V)
Fig.11 Typical switching characteristics
Fig.12 Diode typical forward characteristics
1200
10000
1000
800
600
400
200 T_j = 125˚C
V_ge = ±15V
R_g = 5Ω
0
0
200
400
600
Collector-emitter voltage, V_ce - (V)
Fig.13 Reverse bias safe operating area
I_C max. (single pulse)
1000
50µs
100µs
100
I
C
max. _DC
t_p = 1ms
(continuous)
10
1
800
1
10
100
1000
Collector-emitter voltage, V_ce - (V)
Fig.14 Forward bias safe operating area (DC and single pulse)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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