GP500LSS06S Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP500LSS06S
TYPICAL CHARACTERISTICS
1000
Common emitter
900 T_case = 25˚C
800
V_ge = 20/15V
V_ge = 12V
700
600
500
400
V_ge = 10V
300
200
100
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, V_ce - (V)
Fig.3 Typical output characteristics
1000
Common emitter
900 T_case = 125˚C
800
V_ge = 20/15V
V_ge = 12V
700
600
500
400
V_ge = 10V
300
200
100
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, V_ce - (V)
Fig.4 Typical output characteristics
100
Tj = 25˚C
90 ^VGE ^{= ±15V}
V_CE = 300V
80
70
60
A
50
B
40
30
C
20
A: Rg = 15Ω
10
B: R_g = 10Ω
C: R_g = 5Ω
0
0
100
200
300
400
500
Collector current, I_C - (A)
Fig.5 Typical turn-on energy vs collector current
100
Tj = 125˚C
90 ^VGE ^{= ±15V}
V_CE = 300V
80
70
A
60
B
50
C
40
30
20
A: Rg = 15Ω
10
B: R_g = 10Ω
C: Rg = 5Ω
0
0
100
200
300
400
500
Collector current, I_C - (A)
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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