GP500LSS06S Datasheet, PDF (2/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP500LSS06S
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
V_CES
V
GES
I_C
Collector-emitter voltage
Gate-emitter voltage
Collector current
I
C(PK)
P_max
Maximum power dissipation
V_isol
Isolation voltage
V_GE = 0V
-
DC, T_case = 25˚C
DC, T_case = 75˚C
1ms, T = 25˚C
case
1ms, T_case = 75˚C
(Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
600
V
±20
V
700
A
500
A
1400
A
1000
A
2500
W
2500
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
R
th(j-c)
R_th(j-c)
R_th(c-h)
T_j
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - Case to heatsink
Junction temperature
T_stg
Storage temperature range
-
Screw torque
Conditions
DC junction to case
DC junction to case
-
Mounting torque 5Nm (with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M6
Min. Max. Units
-
50 ^oC/kW
-
125 ^oC/kW
-
15 ^oC/kW
-
150
o_C
-
125
o_C
- 40 125
o_C
-
5
Nm
-
2
Nm
-
5
Nm
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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