GP500LSS06S Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP500LSS06S
INDUCTIVE SWITCHING CHARACTERISTICS
T_j = 25˚C unless stated otherwise
Symbol
Parameter
t_d(off)
Turn-off delay time
t
Fall time
f
E_OFF
Turn-off energy loss
t_d(on)
Turn-on delay time
t
Rise time
r
E
Turn-on energy loss
ON
t
rr
Diode reverse recovery time
Q
Diode reverse recovery charge
rr
T = 125˚C unless stated otherwise.
j
t_d(off)
Turn-off delay time
t
Fall time
f
E_OFF
Turn-off energy loss
t_d(on)
Turn-on delay time
t
Rise time
r
E_ON
Turn-on energy loss
t_rr
Diode reverse recovery time
Q_rr
Diode reverse recovery charge
Conditions
Min. Typ. Max. Units
- 1150 -
µs
I_C = 500A
V_GE = ±15V
V_CE = 50% V_CES
R
G(ON)
=
R
G(OFF)
=
5Ω
L ~ 100nH
-
220
-
ns
-
45
-
mJ
-
490
-
ns
-
225
-
ns
-
30
-
mJ
I_F = 500A
-
225
-
ns
V_R = 50%V_CES, dI_F/dt = 1500A/µs
-
20
-
µC
- 1400 -
µs
I_C = 500A
V
GE
=
±15V
V_CE = 50% V_CES
R_G(ON) = R_G(OFF) = 5Ω
L ~ 100nH
-
400
-
ns
-
65
-
mJ
-
550
-
ns
-
320
-
ns
-
50
-
mJ
I_F = 500A
-
310
-
ns
V_R = 50%V_CES, dI_F/dt = 1500A/µs
-
28
-
µC
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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