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| GP500LSS06S Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Single Switch IGBT Module | |||
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GP500LSS06S
ELECTRICAL CHARACTERISTICS
Tj = 25ËC unless stated otherwise.
Symbol
Parameter
ICES
Collector cut-off current
IGES
VGE(TH)
Gate leakage current
Gate threshold voltage
VCE(SAT) Collector-emitter saturation voltage
I
Diode forward current
F
IFM
Diode maximum forward current
VF
Diode forward voltage
Cies
Input capacitance
L
Module inductance
M
Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tj = 125ËC
VGE = ±20V, VCE = 0V
IC = 20mA, VGE = VCE
VGE = 15V, IC = 500A
VGE = 15V, IC = 500A, Tj = 125ËC
DC
tp = 1ms
IF = 500A,
IF = 500A, Tj = 125ËC
VCE = 25V, VGE = 0V, f = 1MHz
-
Min. Typ. Max. Units
-
-
25 mA
-
-
100 mA
-
-
2
µA
4
-
7.5
V
-
2.2 2.8
V
-
2.3 2.9
V
-
-
500 A
-
-
1000 A
-
1.1 1.9
V
-
1.05 1.8
V
- 54000 -
pF
-
15
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com
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