GP500LSS06S Datasheet, PDF (6/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP500LSS06S
75
70
T_j = 25˚C
V_GE = ±15V
65 _{VCE = 300V}
60
55
A
50
B
45
C
40
35
30
25
20
15
10
A: R_g = 15Ω
5
B: R_g = 10Ω
C: R_g = 5Ω
0
0
100
200
300
400
500
Collector current, I_C - (A)
Fig.7 Typical turn-off energy vs collector current
75
70
Tj = 125˚C
V_GE = ±15V
A
B
65 _{VCE = 300V}
C
60
55
50
45
40
35
30
25
20
15
10
A: Rg = 15Ω
5
B: Rg = 10Ω
C: R_g = 5Ω
0
0
100
200
300
400
500
Collector current, I_C - (A)
Fig.8 Typical turn-off energy vs collector current
5
T_j = 25˚C
V_GE = ±15V
V_CE = 300V
4
R_g = 5Ω
5
Tj = 125˚C
V_GE = ±15V
V_CE = 300V
4
R_g = 5Ω
3
3
R_g = 10Ω
Rg = 10Ω
2
2
R_g = 15Ω
Rg = 15Ω
1
1
0
0
100
200
300
400
500
Collector current, I_C - (A)
Fig.9 Typical diode turn-off energy vs collector current
0
0
100
200
300
400
500
Collector current, I_C - (A)
Fig.10 Typical diode turn-off energy vs collector current
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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