GP350MHB06S Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP350MHB06S
1400
1200 td(off)
1000
Tj = 125˚C
V_GE = ±15V
V_CE = 300V
R_g = 5Ω
800
600
400 _td(on)
tf
200
tr
0
0 50
100 150 200 250 300 350
Collector current, I_C - (A)
Fig.11 Typical switching characteristics
450
400
350
300
250
T_j = 125˚C
200
150
T_j = 25˚C
100
50
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Foward voltage, V_F - (V)
Fig.12 Diode typical forward characteristics
700
10000
600
500
400
300
200
100 ^{Tj = 125˚C}
V_ge = ±15V
R_g = 5Ω
0
0
200
400
600
Collector-emitter voltage, V_ce - (V)
I_C max. (single pulse)
1000
50µs
100
I_C
max.
DC
t_p = 1ms
(continuous)
100µs
10
800
1
1
10
100
1000
Collector-emitter voltage, V_ce - (V)
Fig.13 Reverse bias safe operating area
Fig.14 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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