GP350MHB06S Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP350MHB06S
TYPICAL CHARACTERISTICS
450
Common emitter
400 ^Tcase ^{= 25˚C}
V_ge = 20/15/12/10V
350
300
250
200
150
100
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector-emitter voltage, V_ce - (V)
Fig.3 Typical output characteristics
450
Common emitter
400 ^Tcase ^{= 125˚C}
V_ge = 20/15/12/10V
350
300
250
200
150
100
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Collector-emitter voltage, V_ce - (V)
Fig.4 Typical output characteristics
20
Tj = 25˚C
18 ^VGE ^{= ±15V}
V_CE = 300V
A
16
14
B
12
10
C
8
6
4
A: Rg = 15Ω
2
B: R_g = 10Ω
C: R_g = 5Ω
0
0
50 100 150 200 250 300 350
Collector current, I_C - (A)
Fig.5 Typical turn-on energy vs collector current
45
T_j = 125˚C
40 ^{VGE = ±15V}
V_CE = 300V
35
A
B
30
25
C
20
15
10
A: R_g = 15Ω
5
B: R_g = 10Ω
C: R_g = 5Ω
0
0
50 100 150 200 250 300 350
Collector current, I_C - (A)
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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