GP350MHB06S Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP350MHB06S
GP350MHB06S
Half Bridge IGBT Module
Replaces January 2000 version, DS4923-4.0
DS4923-5.0 October 2001
FEATURES
s n - Channel
s High Switching Speed
s Low Forward Voltage Drop
s Isolated Base
APPLICATIONS
s PWM Motor Control
s UPS
KEY PARAMETERS
V_CES
V_CE(sat)
I
C25
I_C75
I_C(PK)
(typ)
(max)
(max)
(max)
600V
2.0V
500A
350A
1000A
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP350MHB06S is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as: GP350MHB06S
Note; When ordering, use complete part number.
11(C²)
1(E₁C₂)
9(C¹)
2(E₂)
6(G²)
7(E²)
3(C₁)
5(E¹)
4(G¹)
Fig. 1 Half bridge circuit diagram
11
1
2
3
6
10
7
8
5
9
4
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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