GP350MHB06S Datasheet, PDF (6/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP350MHB06S
30
Tj = 25˚C
V_GE = ±15V
25 ^{VCE = 300V}
20
A
B
C
15
10
5
A: Rg = 15Ω
B: R_g = 10Ω
C: R_g = 5Ω
0
0
50 100 150 200 250 300 350
Collector current, I_C - (A)
Fig.7 Typical turn-off energy vs collector current
45
Tj = 125˚C
40 ^{VGE = ±15V}
VCE = 300V
35
A
B
C
30
25
20
15
10
A: Rg = 15Ω
5
B: R_g = 10Ω
C: R_g = 5Ω
0
0
50 100 150 200 250 300 350
Collector current, I_C - (A)
Fig.8 Typical turn-off energy vs collector current
3.5
T_j = 25˚C
V_GE = ±15V
3.0 V_CE = 300V
2.5
2.0
1.5
R_g = 5Ω
R_g = 10Ω
R_g = 15Ω
3.5
Tj = 125˚C
V_GE = ±15V
3.0 V_CE = 300V
2.5
2.0
1.5
Rg = 5Ω
Rg = 10Ω
Rg = 15Ω
1.0
1.0
0.5
0.5
0
0 50 100 150 200 250 300 350
Collector current, I_C - (A)
Fig.9 Typical diode turn-off energy vs collector current
0
0 50 100 150 200 250 300 350
Collector current, I_C - (A)
Fig.10 Typical diode turn-off energy vs collector current
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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