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GP350MHB06S Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module
◁
GP350MHB06S
INDUCTIVE SWITCHING CHARACTERISTICS
T = 25˚C unless stated otherwise
j
Symbol
Parameter
td(off)
Turn-off delay time
t
Fall time
f
E
Turn-off energy loss
OFF
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
trr
Diode reverse recovery time
Qrr
Diode reverse recovery charge
Tj = 125˚C unless stated otherwise.
td(off)
Turn-off delay time
t
Fall time
f
E
Turn-off energy loss
OFF
t
Turn-on delay time
d(on)
tr
Rise time
EON
Turn-on energy loss
trr
Diode reverse recovery time
Qrr
Diode reverse recovery charge
Conditions
Min. Typ. Max. Units
-
730
-
ns
I = 350A
C
VGE = ±15V
VCE = 50% VCES
R
G(ON)
=
R
G(OFF)
=
5Ω
L ~ 100nH
-
250
-
ns
-
26
-
mJ
-
320
-
ns
-
150
-
ns
-
10
-
mJ
IF = 350A
-
190
-
ns
V
R
=
50%V ,
CES
dI /dt
F
=
1000A/µs
-
12
-
µC
-
910
-
ns
I = 350A
C
VGE = ±15V
VCE = 50% VCES
R
G(ON)
=
R
G(OFF)
=
5Ω
L ~ 100nH
-
490
-
ns
-
40
-
mJ
-
380
-
ns
-
250
-
ns
-
35
-
mJ
IF = 350A
-
280
-
ns
V
R
=
50%V ,
CES
dI /dt
F
=
1000A/µs
-
18
-
µC
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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