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| GP350MHB06S Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module | |||
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GP350MHB06S
ELECTRICAL CHARACTERISTICS
T = 25ËC unless stated otherwise.
j
Symbol
Parameter
I
CES
Collector cut-off current
IGES
VGE(TH)
Gate leakage current
Gate threshold voltage
V
Collector-emitter saturation voltage
CE(SAT)
IF
Diode forward current
IFM
Diode maximum forward current
VF
Diode forward voltage
Cies
Input capacitance
Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tj = 125ËC
VGE = ±20V, VCE = 0V
IC = 10mA, VGE = VCE
VGE = 15V, IC = 350A
VGE = 15V, IC = 350A, Tj = 125ËC
DC
tp = 1ms
IF = 350A,
IF = 350A, Tj = 125ËC
VCE = 25V, VGE = 0V, f = 1MHz
Min. Typ. Max. Units
-
-
2
mA
-
-
-
mA
-
-
±1
µA
4
-
7.5
V
-
2.0 2.6
V
-
2.2 2.8
V
-
-
215 A
-
-
700 A
-
1.51 2.31 V
-
1.5 2.3
V
- 22500 -
pF
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com
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